Abstract
This paper describes a computer simulation for oxygen precipitation in silicon crystals subjected to thermal treatments. In the simulation based on the classical nucleation theory, it is assumed that an oxygen precipitate is spherical and its nucleus is a carbon atom. In addition, to explain oxygen precipitation at high temperatures, the simulation takes into consideration coarsening of the precipitate, which is inferred from obtained three-step annealing results. Simulated results are compared with experimental results obtained from a complementary metal-oxide-silicon transistor thermal process in addition to the three-step annealings results. As a result, it is proven that the proposed simulation can predict the precipitated oxygen concentration in wafers subjected to various thermal treatments.
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