Abstract
Abstract A computer model of thick resistive films treated as mixtures of conducting and insulating phases is developed. The much greater size of the insulating regions compared with the conducting regions is taken into account in the model and is expressed in terms of the ration α of the diameter of the insulating region to the diameter of the conducting region. It is found that increasing α from 1 to 12 results in a decrease in the critical volume fraction (CVF) of the model from 0.16 to 0.048. This reflects the very small values of the CVF observed experimentally for thick resistive films and indicates that this is due to clustering of the conducting phase. Similar behaviour is predicted by the two-dimensional computer model which is developed as a flat counterpart of the three-dimensional model. The results obtained from the three-dimensional model are compared with the data measured for real thick resistive films. Both sets of data satisfy a hyperbolic function.
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