Abstract
A Monte Carlo model has been used to study surface growth in thin film epitaxy. The model accounts for atom attachment, detachment, and surface diffusion. By varying the deposition temperature and impingement rate, we have explored the surface roughening transition in a nonequilibrium situation and the conditions under which normal, lateral, and step flow growth occurs. The results show that reentrant oscillation occurs as a result of the variation of surface diffusion length with deposition temperature, and that it is a natural phenomenon in kinetic thin film deposition on substrates with permanent steps. We have also examined the morphological instability in step flow growth and found that it is related to the step height. Steps with multi-atomic layers are seen to be less stable in a surface diffusion field, due to a decrease in the attachment rate of growth units from the upper terrace.
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