Computer Simulation of Sputter-Deposition Processes

Abstract

Sputter deposition process was investigated by computer simulation in order to clarify the effects of sputter-deposition parameters (sputtering gas pressure, substrate temperature, and high-energy particle bombardment of the film surface) on the microstructure of the film. Changes in sputtering gas pressure lead not only to changes in the distributions of the incidence angles and energy distribution of deposition particles, but also to changes in the film composition. The gas pressure dependence of the film composition in magnetron sputtering differs significantly from that in facing target sputtering. The surface migration of the deposited atoms due to thermally activated hopping leads to a considerable increase in film density. The bombardment of the film surface by high energy particles induces a significant migration of the deposited atoms and results in a dense structure.