Abstract
The sensitivity of computer memory devices to single event upsets (SEUs) caused by ionizing radiation provided the foundation for a proposed dynamic Random Access Memory (DRAM) based position sensitive radiation sensor, which is likely to be used for studying the movement of radiolabelled pharmaceuticals in biological tissues in vitro using positron emitting tracers. By making use of the ITS [8] Monte Carlo code, simulations of the positron interactions with the materials consisting a DRAM device have been carried out for four positron emitters, i.e. 18F, 13N, 11C and 15O, which are of interest in studying biological functions. The device geometry modelling and the positron energy spectra of the above emitters obtained by utilizing the Fermi-Kurie plots have been successfully applied. Finally, the energy deposition of positrons within the different layers of the DRAMs were investigated. The aim of this paper is to present and discuss the results of these simulations.
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