Abstract
The three-dimensional growth chamber model was established by GAMBIT software, and the FLUENT software was used to simulate the Vapor Phase Epitaxy ( VPE ) growth AlN material. By changing parameters, results of simulation were obtained, in turn described the effect of uniformity and concentration of AlN. The study mainly focuses on the research of flow velocities of nitrogen and argon gas, the distance from the substrate to the inner tube mouth, the substrate front-back angular height difference, the inner tube diameter, and the substrate thickness. It is discovered through the research: above parameters play a very important role in the crystal growth of AlN film, and there are optimal parameter values. The structure of growth chamber is designed and optimized according to the simulation result. By using the simulation software, experimental costs can be greatly saved, which provides a theoretical basis for the optimal growth process of high quality AlN film, and has a certain guiding role for the actual growth process.
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