Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation

Abstract

A heat transfer finite element analysis is performed to simuaate the whole Czochralski process thermal history of a silicon ingot 150 mm in diameter pulled from an initial nutrient melt of 60 kg. The computed crystal cooling rates are carefully examined to highlight the most meaningful temperature range (1073–1273 K) and its upper dwell-time threshold (150 min), which is critical for stacking fault microdefects generation.