Computer Simulation of Channeling Effects in Ion Implantation

Abstract

ABSTRACTOur binary collision code Crystal-TRIM is applied to simulate 1 MeV P+ implantation into single-crystalline silicon at ion incidence into the [100] axial channel direction and doses between 2 × 1013 cm−2 and 6.7 × 1014 cm−2. The maximum penetration depth of the ions is determined by the electronic stopping of the well-channeled particles. The shape of the range distributions depends on (i) the thin amorphous surface layer on silicon, (ii) the radiation-induced production of vacancies and interstitials, and (iii) the static atomic disorder due to electronic energy deposition. The comparison of experimental data with results of computer simulations shows that at low doses at least the influence of the first two factors has to be considered. At higher doses the radiation damage due to nuclear energy deposition dominates the other effects.