Abstract

The selectively electrical doping of high-temperature electronic materials, such as SiC, GaAs, and GaN, using ion implantation, is an important technique that has been widely used in semiconductor industries. However, ion irradiation and the ion beam process create atomic-level defects, nano-defect structures and nanoamorphous domains, particular under ion-implantation to high dopant concentrations, the accumulation of which can cause amorphization, dopant diffusion, and dopant–defect interactions. These defects and nanoscale structures generated by ion–solid interaction prevent the electrical activation of the implanted dopant atoms and can affect the performance of semiconductor-based devices.

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