Computer simulation and RBS/C studies of high-dose N+and Al+co-implantation in 6H-SiC

Abstract

The (SiC)1(AlN) system is being extensively investigated due to the full miscibility of the two constituents, SiC and A1N, their good thermal and lattice matches, and the the possibility of modifying the band gap of the resulting structure over a wide range of 2.9 eV (6H-SiC) to 6.2 eV (2H-AIN) [1]. From a practical viewpoint, the solid solutions of SiC and A1N are promising materials for advanced high-temperature electronic and optoelectronic devices. One novel method of producing thin layers of(SiC)1(AlN) potentially suitable for microelectronic applications is the use of N and Al co-implantation into 6H-SiC at elevated temperatures followed by annealing, i.e. ion-beam synthesis. Hitherto, to the best of our knowledge, there has been only one report on the formation ofburied (SiC)1(AlN) layers in 6H-SiC by ion-beam synthesis [2]. This work is an attempt to model the fundamental processes that occur when 6H-SiC is implanted at elevated substrate temperatures with high doses of N and J ions to form thin buried layers of (SiC)1(AlN) having predetermined composition and dimensions. Results from the calculations have been correlated with those obtained by Rutherford backscattering/ channelling spectrometry (RBS/C).