Abstract
In this study we present computer simulations and experimental results of electric field distribution inside silicon PIN devices before and after the introduction of radiation-induced damage. The investigated devices were irradiated with 24 GeV/ c protons and characterized using atomic force microscopy based methods. The topic of “type inversion” of irradiated silicon devices is simulated using commercial TCAD software. The results of surface potential difference measured by atomic force microscopy on non-irradiated devices are in good agreement with the simulated results for low interface charge case.
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