Abstract
Abstract Czochralski growth of 300 mm diameter Si crystals with applied horizontal magnetic field is considered. A combined 2D-3D computer model is used for detailed description of thermal convection and oxygen transport in the melt. The model is extended to account for the effect of melt undercooling on the crystallization front and for the effect of soluto-capillary convection on the melt free surface. For a particular crystal growth system with published experimental data of temperature distribution in the melt, modeling results are compared with measurements and other calculations. A new flow structure in the melt is reported, which can explain experimental data with asymmetric melt temperature distribution around the crystal and with quite low temperature values in a small area under the free surface in the cross section orthogonal to the magnetic field induction vector. The effect of the melt flow on oxygen transport and different approaches of turbulence modeling are discussed as well.
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