Abstract
We have grown 3″, silicon-doped GaAs crystals with low dislocation density by the vertical gradient freeze (VGF) method. The thermal conditions in a newly designed, multi-zone VGF-furnace were optimized by the aid of numerical simulation. A computer controlled temperature-time program of the 9 heaters was acquired which allows to keep the axial temperature gradient in the solid (liquid) GaAs at the optimized constant values of 7(2) K/cm during the whole growth process. By using these calculated heater temperatures in real growth experiments, we succeeded in growing 3″ single crystals with EPD<500 cm −2.
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