Abstract
The understanding of the main processes in a VPE system is necessary to grow epitaxial structures with wanted parameters and also to control the growth process. On the basis of Shaw’s adsorption model [1], Korec and Heyen [5] have extended these studies and given a complete description of growth kinetics of VPE GaAs including all steps: diffusion in the gas phase, adsorption, chemical reactions and surface diffusion. They applied their model to growth on the (100) surface. Since for the device application, especially for microwave devices, this process and this orientation are used in our case, too, an attempt was made for computer assisted modelling of the growth rate. Computed results are compared with experimental data and a good agreement is obtained.
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