Abstract
An RF MOSFET power amplifier is designed using linear and nonlinear analysis programs. It includes nonlinear optimisation within a harmonic-balance program. The amplifier has a nominal output of 15 W over the frequency band 118-175 MHz, using a single MOSFET with LC matching elements. The design procedure is described in detail, including the choice of matching networks and stabilising elements as well as the nonlinear optimisation. A nonlinear equivalent-circuit model is used for the RF power MOSFET, while passive-component models take into account the major parasitic effects. The amplifier is constructed directly from the computer-aided design and evaluated. This computer-aided-design approach takes the initial design to a level where only minimal empirical adjustments may be required. A modified procedure is proposed which reduces modelling errors in a final computer-aided design.
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