Abstract
Compute-in-memory (CIM) hardware accelerator has been emerged as a promising paradigm for executing the artificial intelligence (AI) tasks owing to its superior energy efficiency. In this keynote presentation, we survey recent progresses of CIM technologies from device-level demonstration to system-level benchmark. First, the ferroelectric devices (FeM-FinFET., ferroelectric non-volatile capacitor) are introduced for resistive and capacitive read-out mechanism for crossbar arrays. Second, resistive random access memory (RRAM) based CIM macro has been taped-out into prototype chips in commercial foundry process and the related NeuroSim validation with measured silicon data is shown. Last, heterogeneous 3D integration scheme for SRAM, RRAM and 3D NAND tiers and logic tier is proposed.
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