Computational study of Cr substituted single-walled GaN nanotubes

Abstract

In present study, we have investigated electronic, optical and transport properties of Cr substituted SW GaNNT. We find that the (6, 0) nanotubes of GaN are stable and semiconducting with the band gap of 2.4 eV. Doping with Cr appears to reduce the band gap of GaN nanotubes. The V-I characteristics show typical tunnel diode behaviour for the device where the tunnelling current reaches a maximum value at the applied bias of 0.4 V and we observed a negative slope region when forward bias is applied. Because of this unusual behaviour, it can be used in number of special applications in electronic devices.