Computational simulations of pore nucleation in silicon(1 1 1)

Abstract

Float zone n-Si(1 1 1) was electrochemically etched in diluted NH 4F to form porous nuclei. The experimental results were compared with computational simulations of pore nucleation and growth. Electrochemical etching of silicon(1 1 1) results in pore nucleation preferentially localized on the edges of atomic terraces. The initial pore nuclei have diameter and depth of 17 nm and 0.3 nm, respectively. We find a correlation between H-terminated Si(1 1 1) atomic surface morphology and electric field distribution on pore nucleation and growth mechanism. The H-terminated surface is composed from wide (100–200 nm) atomic terraces with steps of 0.3 nm height. Electric field enhancement occurs at the terrace edges leading to focusing the holes trajectories. This leads to weakening of the Si–Si backbonds resulting in easy atom removing. The maximum electric field was observed at terrace edges and at the semispherical pore bottom.