Abstract
In the transmission of analog and digital signals, the linearization of RF power amplifiers has been demanding considerable effort of electronic engineering in the last years. The legal demands in maintaining the adjacent channels with low levels of spurious current are progressively more restrictive. Those spurious currents originate on the non-linearities intrinsic to any semiconductor device under excitement in high level with complex signals. In this paper, the results of the numeric simulation are presented accomplished with the mathematical model elaborated by Stapleton (IEEE Trans. Vehicular Tech., vol. 41, no. 1, pp. 49-56, 1992; Appl. Microwave & Wireless, vol. 13, no. 2, pp. 72-77, 2001; ibid. vol. 13, no. 2, pp. 40-46, 2001). A simulation with the software MatLab was done showing the possibility of reducing levels of the intermodulation products of 3/sup rd/ and 5/sup th/ order in a RF power amplifier of the order of 50 dB.
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