Abstract

Steric and electronic effects play a profound role in determining the mechanisms of surface reactions. In the case of reactions of metalorganic precursors on solid prefunctionalized surfaces, the contribution of these effects has to be considered both for the incoming metalorganic precursor molecule and for the functionalized surface itself. This study uses density functional theory calculations with simple cluster models to investigate the technologically important reactions of tetrakis(dimethylamido)titanium (TDMAT) and trimethylaluminum (TMA) with silicon surfaces functionalized with preadsorbed amines. This approach provides an opportunity to compare the contribution of electronic effects in the process of transamination for TDMAT and in the process of aluminum deposition followed by methane desorption for TMA. Bulky dimethylamido substituents of TDMAT are shown to suppress the electronic effects of the surface-bound amines unless the very open surface-bound structures of −NH2 and −NHF are compared. A...

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