Computational design and optimization of nanostructured AlN deep-UV grating reflectors.

Abstract

Deep-ultraviolet (DUV) optoelectronics require innovative light collimation and extraction schemes for wall-plug efficiency improvements. In this work, we computationally survey material limitations and opportunities for intense, wavelength-tunable DUV reflection using AlN-based periodic hole and pillar arrays. Refractive-index limitations for underlayer materials supporting reflection were identified, and MgF2 was chosen as a suitable low-index underlayer for further study. Optical resonances giving rise to intense reflection were then analyzed in AlN/MgF2 nanostructures by varying film thickness, duty cycle, and illumination incidence angle, and were categorized by the emergence of Fano modes sustained by guided mode resonances (holes) or Mie-like dipole resonances (pillars). The phase-offset conditions between complementary modes that sustain high reflectance (%R) were related to a thickness-to-pitch ratio (TPR) parameter, which depended on the geometry-specific resonant mechanism involved (e.g., guided mode vs. Mie dipole resonances) and yielded nearly wavelength-invariant behavior. A rational design space was constructed by pointwise TPR optimization for the entire DUV range (200-320 nm). As a proof of concept, this optimized phase space was used to design reflectors for key DUV wavelengths and achieved corresponding maximum %R of 85% at λ = 211 nm to >97% at λ = 320 nm.