Computational analysis on the role of an AGT current enhancer in a CZTS-based thin film solar cell

Abstract

This paper gives a synopsis of a CZTS-based n-CdS/p-CZTS/p + -AgGaTe2/p++-MoS2 thin film solar cell that has been designed and explored by the simulation technique with the help of a solar cell capacitance simulator (SCAPS-1D). The design utilizes CdS as the window layer, CZTS as the first absorber layer, AgGaTe2 as the second absorber layer, and MoS2 as the BSF layer. The influencing parameters of these materials such as thickness, doping concentration, and defect density have been adjusted to achieve the right balance between the proposed structure and to see the changes that affect the device's overall performance. In ideal condition, the single n-CdS/p-CZTS heterojunction structure shows power conversion efficiency (PCE) of 17.75% with short circuit current, JSC of 24.82 mA/cm2, open circuit voltage, VOC of 0.88 V and fill factor (FF) of 81.3%. But, with the inclusion of MoS2 as the BSF, the overall PCE is elevated to 25.84% with VOC of 1.09 V, JSC of 26.96 mA/cm2 and FF of 87.64%. Finally, with the fusion of AgGaTe2 as a current augmenting layer the JSC gets a huge boost and is enhanced to 34.7 mA/cm2 with a PCE of 33.89%. These simulation findings unveil the potential of the proposed solar cell structure with CZTS as the absorber layer and AgGaTe2 as the current boosting layer in creating an environment-friendly, affordable and highly efficient thin film solar cell.