Abstract
Two-dimensional computational analysis of lateral overgrowth of GaAs by liquid-phase epitaxy has been carried out. The evolution of the growth interfaces is obtained by using growth velocity calculated from solute concentration field in the vicinity of the growth layer. Effects of interface kinetics and crystal surface tension (Gibbs–Thomson effect) were taken into account. The shapes of grown epilayers are in good agreement with experimental observations. The comparison of numerical results under different growth conditions demonstrates the importance of interface kinetics and Gibbs–Thomson effects on shape and aspect ratio of epitaxial laterally overgrown (ELO) layers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
