Computation of Transient Near-Field Radiated by Electronic Devices from Frequency Data

Abstract

Facing to the increase of architecture complexity in the modern high-speed electronic equipments, the electromagnetic compatibility (EMC) characterization becomes a crucial step during the design process. This electromagnetic (EM) characterization can manifest with the unintentional conducting or radiating perturbations including, in particular, the near-field (NF) emissions. Accurate modelling method of this emission in NF zone becomes one of electronic engineer designers and researchers most concerns (Shi et al. 1989, Baudry et al. 2007, Vives-Gilabert et al. 2007, Vives-Gilabert et al. 2009, Song et al. 2010, Yang et al. 2010). This is why since the middle of 2000s; the NF modelling has been a novel speciality of the electronic design engineers. This modelling technique enables a considerable insurance of the reliability and the safety of the new electronic products. To avoid the doubtful issues related to the EM coupling, this analysis seems indispensable for the modern RF/digital electronic boards vis-a-vis the growth of the integration density and the operating numerical data-speed which achieves nowadays several Gbit/s (Barriere et al. 2009, Archambeault et al. 2010). In this scope, the influence of EM-NF-radiations in time-domain and in ultra-wide band (UWB) RF-/microwave-frequencies remains an open-question for numerous electronic researchers and engineer designers (Ravelo et al. 2011a & 2011b, Liu Y. et al. 2011a & 2011b). In the complex structures, the current and voltage commutations in the non-linear electronic devices such as diodes, MOSFETs and also the amplifiers can create critical undesired transient perturbations (Jauregui et al. 2010a, Vye 2011, Troscher 2011, Kopp 2011). Such electrical perturbations are susceptible to generate transient EM-field radiations which need to be modelled and mastered by the electronic handset designers and manufacturers.