Abstract
We propose a generalization of Rank Modulation (RM) scheme, Compressed Rank Modulation (CRM) scheme for nonvolatile memories. CRM stores information in the multiset permutation induced by the charge levels of N = nΣ i=1 m i cells: set the ranks of the first m 1 highest charge level cells as 1, the ranks of the next m 2 highest charge level cells are 2, and the ranks of the last m„ highest charge level cells are n. The only allowed charge-placement method is the minimal-push-up aiming to minimize the increase of highest charge levels, and such minimization of highest charge level increase is defined as rewriting cost. CRM achieves a higher capacity comparing with RM, and maintains its advantages meanwhile. The closed-form formula for rewriting cost, sizes of balls, asymptotical rate analysis for rewriting codes, and one rewriting code construction are presented.
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