Abstract
Oxygen bonding in La-silicate film with compositional gradient has been characterized by x-ray photoelectron spectroscopy. Based on an analytical model of bridging and nonbridging oxygen, the O 1s spectra arising from La-silicate layer have been deconvoluted with compositionally dependent parameters. For a composition ratio of 1:1 for SiO2 and LaO1.5 on the surface of the La-silicate layer, negative binding energy shifts of 0.35 and 0.10 eV for bridging and nonbridging oxygen, respectively, have been found to well interpret the angle-resolved spectra. The method has also been applied to characterize the temperature dependence of interface reactions at La2O3/Si with in situ processed Pt electrode. SiO4 molecules combined with bridging and nonbridging oxygen atoms have been found to form by high temperature annealing. The thickness of the silicate layer of 0.4 nm at as-deposited state has been found grow up to 2.8 nm after 500 °C annealing. From rough estimation, it has been revealed that 10% of the newly created bridging oxygen atoms by annealing are incorporated into SiO4 network which contain also nonbridging oxygen atoms.
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