Abstract
Electrical characteristics of HfO2/SiO2 interface are comprehensively studied to clarify the intrinsic origin of flatband voltage (VFB) shift in metal-oxide-semiconductor (MOS) device with high-k/metal gate structure. A methodology for quantitative extraction of the interface dipole and chargers at high-k/SiO2 interface is proposed. The dipole and charges at HfO2/SiO2 interface are extracted to be about −0.38 V and −1.15×1013 cm−2, respectively. This result shows that the high density of negative charges at HfO2/SiO2 interface rather than the interface dipole are the dominant cause of the positive VFB shift in the MOS device with HfO2/SiO2 stack.
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