Abstract
Wire bond is the most common inter-connection method used to connect microchips to the terminals of a chip package. Wire bond related issues occupy a large portion of microcircuit manufacturer failure. The understanding of contamination sources and their impacts on wire bond reliability is critical. In this work, gold (Au) and copper (Cu) wires are boned to Al bond pad. Chlorine (Cl) and sulfur (S) contaminations were purposely introduced to wire, epoxy molding compound (EMC) and bond pad. bHAST (biased highly accelerated stress test) and HTS (high temperature storage test) were conducted to see how the reliability performance of Au and Cu under Cl and S environment. The results show that Cl plays a significant role on wire bond reliability. Whilst, S does not impact much on wire bond reliability. On the other hand, contaminations from EMC show more critical impact on wire bond reliability compared to those from wire and bond pad.
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