Abstract
The thermal stability performance of double δ-doped metamorphic heterostructure field-effect transistors with Au and metal gates are comprehensively studied and demonstrated. By evaporating the metal gate, the thermal stability of device characteristics are significantly improved as compared with the device with conventional metal gate (Au). Experimentally, the device with a metal gate simultaneously exhibits the considerably lower temperature degradation in turn-on voltage , breakdown voltage , logic swing , transition region width , on-off current ratio , threshold voltage , impact ionization-induced gate current , output conductance , and voltage gain as the temperature is increased from 300 to . Consequently, the studied device with a metal gate is a good candidate for high-speed and high-temperature digital and switching circuit applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
