Abstract
The results of a comprehensive study of the conditions for growing a-SiO x :H 〈Er,O〉 films are presented. The effect of the composition of various erbium-containing targets (a-SiO x :H , ErO x , Er2SiO5, Er2O3, and Er), substrate temperature, and annealing temperatures in argon, air, and under conditions of SiH4 + Ar + O2 plasma glow is studied. In order to obtain a-SiO x :H 〈Er,O〉 films with the highest photoluminescence intensity of erbium ions, it is recommended for the following technological conditions to be used: the substrate holder should be insulated from dc-magnetron electrodes and the working gas mixture should include silane, argon, and oxygen. Single-crystal silicon and metal erbium should be used as targets. The erbium target should be placed only in the Si-target erosion zone.
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