Abstract
The electroluminescence (EL) images obtained under forward and reverse biases in multicrystalline silicon solar cells have been investigated. Under reverse bias, Si solar cells emit EL mainly in the visible wavelength as clusters of bright spots. These clusters of bright spots are localized and their patterns have a good correlation with locations of intrinsic deficiency areas, which were obtained from a temperature subtracted image. The origin of visible wavelength EL emission under reverse bias has been illustrated to be emitted from the depletion region and mostly dominated by bremsstrahlung and indirect-interband mechanisms. In this study, the relationship between EL intensity and oxygen content was investigated. The mechanism of these phenomena was proposed.
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