Comprehensive structural and surface investigation of Sb2Se3 thin-films

Abstract

Earth-abundant antimony selenide (Sb2Se3) is a promising material for the thin-film photovoltaic applications due to its desirable optoelectronic properties and suitable band gap. In this work, we present a comprehensive study on the structural and surface properties of Sb2Se3 thin-films for the potential applications in solar cells. The Sb2Se3 samples were grown on Si (100) substrate and at different substrate temperatures using radio frequency (RF) magnetron sputtering. The XRD diffractogram exhibits that Sb2Se3 is the predominant phase in all the samples, whereas the TEM measurements confirm the nanocrystalline nature of the samples. Raman spectroscopy measurements in the range of 30–500 cm−1 displays the Raman shifts at 148, 190 and 206 cm−1, which confirms the presence of the Sb2Se3 phase. The average surface roughness and grain size were obtained via surface topography with the help of the high-resolution AFM images. The EDS spectra revealed the presence of both Se and Sb as constituent elements in all the samples. The deconvolution of XPS spectra of Se 3p and Sb 3d core level disclose the Sb+3 and Se−2 oxidation state and further confirms the presence of Sb2Se3 phase. The XPS and EDS measurements predict that there is loss of Se during the deposition and it could have adverse effects on the performance of Sb2Se3 solar cell devices.