Comprehensive Regulation of the Threshold Oscillation for Neuromorphic Systems Based on Cryogenic Performance of NbO₂ Device

Abstract

In this study, an oscillating neuron based on the Pt/ NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> / TiN device with high performance was demonstrated. The temperature dependence of NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> threshold switching devices were well studied at cryogenic environment (100 K), where the reaction intensity is cut down and thus facilitates the observation of the performance and mechanisms of the device. To lucubrate these results, the thermoelectric coupling model was simulatively realized and validated based on cryogenic electrical experiments, guiding the influence factors of NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based oscillation system. Ulteriorly, the NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> threshold switching device as oscillating neuron was simulated and its comprehensive regulation was presented. Ambient temperature, switching time and threshold voltage are found to affect the oscillation frequency, while threshold voltage can also change the amplitude of the frequency affected by other factors. This work performs a systematically cryogenic study of NbO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and oscillation system, and simultaneously provides a deep understanding of performance regulation mode of the oscillating system.