Abstract
In this paper, the issue of numerical modeling of radiation-damaged silicon devices is discussed, with reference to radiation detectors employed in high-energy physics experiments. Since the actual physical picture is far too complex to be accounted for at a first-principle (i.e., defect kinetics) level and not yet fully understood, a hierarchical approach has been followed looking for a suitable approximation of macroscopic changes of the electrical behavior of silicon device induced by radiation damage. In particular, a three deep-level trapping mechanism is accounted for by means of Shockley-Read-Hall theory, whereas the shallow-level sensitivity on the radiation is considered by means of a donor-removal model.
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