Abstract
Comprehensive numerical simulations were performed to investigate a novel double gate-injection enhanced gate transistor (DG-IEGT). The DG-IEGT structure eliminates the need for trading off the forward voltage with the switching loss. Because DG-IEGT is a four-quadrant switch, it is capable of conducting currents and blocking voltages in both directions. This capability enables DG-IEGT to be used in many applications to replace multiple switches and diodes. DG-IEGT, therefore, is close to an ideal power switch and should be developed as a next generation device to replace high power insulated gate bipolar transistor.
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