Abstract
The sequentially plasma activated bonding of silicon wafers has been investigated tofacilitate the development of chemical free, room temperature and spontaneous bondingrequired for nanostructure integration on the wafer scale. The contact angle of the surfaceand the electrical and nanostructural behavior of the interface have been studied.The contact angle measurements show that the sequentially plasma (reactiveion etching plasma followed by microwave radicals) treated surfaces offer highlyreactive and hydrophilic surfaces. These highly reactive surfaces allow spontaneousintegration at the nanometer scale without any chemicals, external pressure or heating.Electrical characteristics show that the current transportation across the nanobondedinterface is dependent on the plasma parameters. High resolution transmissionelectron microscopy results confirm nanometer scale bonding which is needed for theintegration of nanostructures. The findings can be applied in spontaneous integration ofnanostructures such as nanowires/nanotubes/quantum dots on the wafer scale.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
