Abstract
In this study, various diagnostic tools were constructed and plasma factors measured to evaluate the intelligence of plasma process equipment. We used an ICP (Inductively Coupled Plasma) reactor with a radio frequency (RF) power of 13.56 MHz, a power of 400 to 800 W, and a pressure of 10 to 30 mTorr. Plasma parameters such as electron density (ne), electron temperature (Te), plasma potential (Vp), and floating potential (Vf) were measured using several instruments (VI probe and mass/energy analyzer, etc.) and subsequently analyzed. Regression analysis was performed to correlate the measured data with the plasma parameters. As a result, the plasma density (ne) and temperature (Te) were observed to be in good agreement with the non-invasive measurement results. In particular, the VI probes were highly correlated with almost all the measured plasma parameters. Therefore, the results of this study provide a basis for the estimation of plasma parameters using non-invasive measurement techniques.
Highlights
Plasma parameters were measured at the radio frequency (RF) powers of 400, 600, and 800 W, and the pressures of 10, 20, and 30 mTorr.were ne was measured using
According to the correlation analysis between the plasma parameters, Va was highly correlated to Te, and ne was highly correlated to the ionic species density
The correlation analysis between the plasma parameters and VI probes indicated that the P2 and I3 components of the VI probe were significantly closely related to the plasma parameters, including the ionic species density
Summary
Publisher’s Note: MDPI stays neutral with regard to jurisdictional claims in published maps and institutional affiliations. A more comprehensive understanding of these plasma processes can be used to develop next-generation plasma process equipment and apply advanced processes For these advanced processes and equipment controls, appropriate diagnostic/monitoring tools should be used to identify the plasma characteristics and monitor plasma’s physical and chemical changes [6]. They are acceptable in manufacturing because non-invasive methods do not perturb plasma These plasma diagnostic methods face two main challenges in the industrial field. One is the large number of variables measured by plasma diagnostic or monitoring devices; the vast amount of data makes it challenging for equipment engineers to determine which variables to observe Another difficulty is the decrease in the sensitivity of measurement signals, which is caused by the narrowing of the physical-chemical reaction target area due to the recent refinement of plasma processes represented by etching and deposition [7].
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