Abstract
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data, collected on several hundred devices. Model describes the average devices’ I-V characteristics as well as their spatial (device-to-device) and temporal variations. Both static and dynamic equations are explicit, computationally inexpensive, and suitable for SPICE modeling. The model's predictive power is validated using experimental data, while its utility by simulating image compression and image classification applications, two practical representative applications of mixed-signal memristor-based hardware.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
