Abstract
This investigation addressed an pseudomorphic high-electron mobility transistor (pHEMT), incorporating double δ-doping carrier supply layers and a composite channel, grown by metallorganic chemical vapor deposition (MOCVD). The pHEMT was fully characterized. When dc was applied, the device had a maximum drain current of , a peak extrinsic transconductance of , and a gate-to-drain breakdown voltage of . At RF, the of the device was with an extrapolated of . Furthermore, this transistor underwent high-temperature tests. At high temperature, the device fabricated from the composite-channel structures still performed excellently.
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