Comprehension of the effects of gamma ray on luminescence intensity of GaN-based light-emitting diodes with multi-quantum well

Abstract

Wavelength dependent luminescence intensity is crucial relationship in determining the physical property of light-emitting diodes (LED). The first object of this work is to search for the applicable method of using wavelength to predict the normalization luminescence intensity, I/I0max, launched from GaN-based LED with multi-quantum well before and after irradiation with γ-ray. Predicated on the principle of nonlinear curve fitting, a typical numerical method is highlighted because the wavelength-dependent luminescence intensity of the LED irradiated by γ with different dose are quantitative analyzed by this method. The simulations agree very well with the observed spectroscopy of 5 curves for intensity versus wavelength. The minimum value of correlation coefficients between actual and calculated data is 0.993, and the maximum average relative error is 7.93%. Another object of this work is to find the relationship between radiation dose and key parameter of function described above in mathematics method. In the light of the calculated results, the influence of γ on key parameter is explained successfully. The terminal benefit is that the normalization luminescence intensity, I/I0max launched from GaN-based LED as a function of both wavelength and radiation dose is given in this paper.