Abstract
We investigated the triple and dual junction solar cells on Si substrate, using III-V compound semiconductor for medium concentrator photovoltaic (MCPV) applications by using TCAD tool (APSYS 2010). The conversion efficiency was investigated as a function of threading dislocation density (TDD) for two different candidate device structures. The multi-junction solar cells on Si showed that heterobarrier can be the main source of series resistance (Rs) of device. Si and Ge doping concentration should be higher than 5×1018 cm−3 to evade solar cell fill factor reduction due to heterobarrier at the interface of Ge and Si. Based on simulation results, compound semiconductor on Si substrate can achieve over 30% conversion efficiency at 100 suns with TDD of 106 cm−2. Simulation results show that III-V multi-junction solar cell on Si is a good candidate for low cost CPV market, especially for medium concentration photovoltaic application.
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