Abstract
In this work, Pb0.97La0.02(ZrxSn0.95−xTi0.05)O3 (PLZST) (0.5 < x < 0.9) tetragonal antiferroelectric (AFET) and orthogonal antiferroelectric (AFEO) ceramics were successfully fabricated by screen printing process. The ceramic materials were in thick-film form bonded with a small amount of glass. The electric field up to 400 kV/cm was presented for antiferroelectric ceramics. Besides, in order to reduce the energy loss of ceramics, the effects of Sn content and temperature on the dielectric properties and energy storage performance of AFE ceramics were investigated. With the increase of Sn content, the forward threshold electric field (EAF) and backward threshold field (EFA) decreased and the energy storage density increased obviously. The maximum energy storage density of 5.6 J/cm3 (30 °C) and 4.7 J/cm3 (120 °C) with corresponding energy efficiency of 67 % and 73 % were obtained in Pb0.97La0.02(Zr0.5Sn0.45Ti0.05)O3 ceramic, which makes this material a promising potential application in capacitors for pulsed power systems.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
