Abstract
The growth rate and composition of Ga xIn 1−xAs layers on nonplanar InP substrates deposited in the MOVPE process at atmospheric pressure using the precursors trimethylgallium-trimethylamine (TMGa-TMN) and trimethylindium-trimethylamine (TMIn-TMN) were investigated. Comparing the growth rates r on the different (001) areas of the nonplanar substrate, we found that r ridge > r planar > r groove. Studying the composition of the Ga xIn 1−xAs on planar substrates, we observed x Ga(001)> x Ga{111}A > x Ga{111)B. Similarly, on patterned samples the (001) plane is that with the highest gallium concentration. On the (001) plane of the nonplanar substrate, the tendency x Ga(ridge) x Ga(planar) x Ga(groove) was observed. Superimposed on this we observed, adjacent to the polar {111} planes, lateral composition gradients, which depend on the orientation of the sidewalls. The experimental results are discussed, using a stagnant boundary layer model. Different reactivities of the Ga- and In-organometal compounds are considered.
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