Abstract
A new AlGaAs layer was formed on GaAs substrates by Zn implantation into an Al0.4Ga0.6As single heterointerface. The Zn implantation of 1015 cm−2 doses at 200 keV with subsequent annealing at 500 °C for 15 min formed the AlxGa1−xAs layer (x<0.4) graded compositionally to the depth with the thickness of about 300 Å. AlGaAs fine patterns of 2–10 μm wide were formed on GaAs substrates by Zn implantation and with low-temperature, short-time annealing.
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