Abstract
(Cd1−xSbx)S thin films were deposited onto glass substrates by the chemical bath deposition. Systematic studies have been undertaken to investigate the effect of Sb composition on thin film properties of chemically deposited (Cd1−xSbx)S thin films. The films were characterized by using X-ray diffractometer (XRD), atomic force microscopy (AFM), photoluminescence emission spectra and UV–VIS–NIR spectrophotometer. The XRD patterns reveal that these thin films have mixed phase of cubic CdS and orthorhombic Sb2S3 crystal structure. AFM images showed uniform deposition of the material over the entire glass substrate and rms roughness was also calculated. The energy band gap for thin films were revealed from the optical studies and were found to decrease from 2.41eV to 2.20eV with increasing Sb doping concentration. After annealing at 400°C, the band gap is found to be increased in the range 2.51–2.26eV. The photoluminescence emission spectra of the films shows two luminescence bands centered around 420nm and 510nm under 250nm excitation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
