Compositional dependent high temperature crystalline phase formation on manganese–silicon thin film combinatorial libraries in controlled oxidizing atmospheres

Abstract

Wide compositional range Mn–Si thin film combinatorial libraries were used for studying the influence of the oxidation potential of the annealing atmosphere (510–12,500 ppm H2O at 900 °C) on phase formation. For all annealing conditions, the formation of silicide phases was evidenced. A threshold for O incorporation in newly formed crystalline phases was found to be related to water contents between 510 and 2880 ppm. In spite of the influence of high potential for oxidation on phase formation, silicide phases were identified for Si-rich alloys. The formation of higher manganese silicide (HMS) phases was identified in the compositional zone ranging from 56 at.% to 80 at.% Si and the exact phases were determined to be influenced by the annealing conditions. With higher water content in the atmosphere, the formation of Mn4Si7 was favored. However, independent on the increase in the water content the HMS formation was generally not inhibited by the applied annealing atmosphere. Given the wide range of possible application of HMS, this is highly relevant for the formation of HMS bulk or thin film materials.