Abstract
Ni/sub 1-//sub x/B/sub x/ amorphous films prepared by room-temperature ion implantation in the concentration range 0.20less than or equal toxless than or equal to0.34 are irradiated at 20 K with 100-keV /sup 1/H and 510-keV /sup 86/Kr ions. The radiation damage is studied at 4.2 K by in situ resistivity experiments and during annealing up to 325 K. It is shown that the nature of the damage depends on the alloy composition. At low B content the increase of resistivity is interpreted in terms of localized defect creation, while at high B content the decrease of resistivity is ascribed to the creation of disordered zones (i.e., free volume). The latter process is enhanced when displacement cascades are induced by irradiation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
