Abstract
Hardness characteristics were investigated on ZnSe1-xTex (0≤x≤0.06) and BeyZn1-ySe1-xTex (0≤x≤0.11, 0≤y≤0.10) bulk single crystals, which were grown by the vertical traveling solvent method using a tellurium solution. ZnSe-related mixed crystals containing tellurium and beryllium were harder than the binary ZnSe crystals due to their larger covalent binding energy. The values of the Vickers hardness showed 2.5 GPa for a ZnSe0.94Te0.06 crystal and 4.3 GPa for a Be0.10Zn0.90Se0.89Te0.11 crystal, compared to 1.1 GPa for a ZnSe crystal. The hardening effect by beryllium is estimated to be twice as effective as that by tellurium. The hardness of the mixed semiconductor crystals was expressed by the concentration of tellurium and beryllium to the 1/2 power. The 1/2 power law in mixed crystals should be clarified, considering the shear moduli related to the ionicity. The minimum etch pit density was 3.0×105/cm2 in a BeyZn1-ySe1-xTex crystal. This may be due to large compositional variations in the mixed crystals, which may influence the hardening effect.
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