Abstract
We investigated photocatalytic activity of γ-Ga2O3 nanocrystals with varying compositions. Substitutional doping with In3+ and Zn2+ allows for a control of charge carrier trapping in native defect states, which was studied by time-resolved photoluminescence spectroscopy. Doping nanocrystals with In3+ decreases while doping with Zn2+ increases the lifetime of the carriers trapped on donor and acceptor sites. The apparent rate constant for the photocatalytic dye degradation correlates well with the average donor-acceptor recombination lifetime, suggesting critical importance of carrier trapping for charge separation. The results of this work demonstrate the design of single-phase photocatalysts by controlling carrier trapping via compositional manipulation.
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