Abstract
We investigated photocatalytic activity of γ-Ga2O3 nanocrystals with varying compositions. Substitutional doping with In3+ and Zn2+ allows for a control of charge carrier trapping in native defect states, which was studied by time-resolved photoluminescence spectroscopy. Doping nanocrystals with In3+ decreases while doping with Zn2+ increases the lifetime of the carriers trapped on donor and acceptor sites. The apparent rate constant for the photocatalytic dye degradation correlates well with the average donor-acceptor recombination lifetime, suggesting critical importance of carrier trapping for charge separation. The results of this work demonstrate the design of single-phase photocatalysts by controlling carrier trapping via compositional manipulation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.