Abstract
AbstractWe report the growth of ZnSe1−xTex (x < 0.9) epitaxial layers using photoassisted Metal- Organic Vapor Phase Epitaxy (MOVPE) on lattice-matched InGaAs/InP (001) substrates. Ternary compositional control was studied as a function of the gas phase composition, growth temperature (360°C – 400°C) and irradiation (12 mW/cm2 – 48mW/cm2). Compositional and structural data were obtained by x-ray rocking curves from 004 and 044 reflections. Lower growth temperatures increased the relative tellurium incorporation but at the expense of the growth rate.
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